p-n Junctions
A p-n junction may be created by doping adjacent regions of a semiconductor with p-type and n-type dopants. If a positive bias voltage is placed on the p-type side, the dominant positive carriers (holes) are pushed toward the junction. At the same time, the dominant negative carriers (electrons) in the n-type material are attracted toward the junction. Since there is an abundance of carriers at the junction, current can flow through the junction from a power supply, such as a battery. However, if the bias is reversed, the holes and electrons are pulled away from the junction, leaving a region of relatively non-conducting silicon which inhibits current flow. The p-n junction is the basis of an electronic device called a diode, which allows electric current to flow in only one direction. Similarily, a third region can be doped n-type or p-type, to form a three-terminal device. These n-p-n and p-n-p junction devices form the basis for most semiconductor devices including the transistor.
Further reading
Encompassing fields
Sub-fields
Concepts
External Links